15.2 Above 2000 V Breakdown Voltage on 2 μm-thick Buffer Ultrathin Barrier AlN/GaN-on-Silicon Transistors
نویسنده
چکیده
A 3-terminal breakdown voltage of 2.3 kV has been achieved on an AlN/GaN heterostructure grown on silicon (111) substrate using an optimized local substrate removal. The epitaxy was grown by metal organic chemical vapor deposition with a total buffer thickness of 5.5 μm. In order to suppress the parasitic substrate conduction phenomena under high electric field, the Si substrate has been locally etched in the high electric field region. After local substrate removal, the device breakdown voltage increased from 1.6 kV to 2.3 kV for 30 μm gate-drain distance in spite of the use of a 6.0 nm ultrathin barrier layer. The high 2DEG carrier density (2×10 cm) provided by the high polarization AlN barrier results in an extremely low specific on-resistance of 4.6 mっ.cm.
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